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VISHAY
GTF701-HS3
Vishay Semiconductors
2-Line EMI-Filter with ESD -Protection
Features
* Space saving LLP package * EMI/RFI filtering with integrated ESD protection for two data lines * ESD protection to IEC 61000 - 4 - 2 Level 4 * ESD protection to IEC 61000 - 4 - 5 (4 A ) * Low insertion loss up to 10 MHz * Good attenuation of high frequency signals * Low operating voltage (5 V) * Low clamping voltage * Low leakage current * Thin film-on-silicon technology * Ideal for cell phones, RF communication, and laptop computer applications
1 6 5 4
Top view
2 3
Pin 1
18821
Mechanical Data
Case: LLP75-6A Plastic case Molding Compound Flammability Rating: UL 94 V-0 Terminals: High temperature soldering guaranteed: 260 C/10 sec. at terminals Weight: approx. 5.2 mg
Pinning: 1 = Input (Output) 1 2 = Ground 3 = Input (Output) 2 4 = Output (Input) 2 5 = not connectect 6 = Output (input) 1
19040
IN (1) 1
6 OUT (1)
2 3 IN (2)
5 4 OUT (2)
Parts Table
Part GTF701-HS3 Ordering code GTF701-HS3-GS08 T1 Marking Remarks Tape and Reel
Document Number 85827 Rev. 1.3, 05-Jul-04
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GTF701-HS3
Vishay Semiconductors Absolute Maximum Ratings
Ratings at 25 C, ambient temperature unless otherwise specified Parameter Steady -state power ESD Air discharge per IEC 61000-4-2 ESD Contact discharge per IEC 61000-4-2 Max. peak pulse current 8/20 s waveform Test condition Symbol P Vpp Vpp IPPM Value 100 15 8 4
VISHAY
Unit mW kV kV A
Thermal Characteristics
Ratings at 25 C, ambient temperature unless otherwise specified Parameter Operating temperature Storage temperature Test condition Symbol Tj TSTG Value - 40 to + 125 - 55 to + 150 Unit C C
Electrical Characteristics
Ratings at 25 C, ambient temperature unless otherwise specified Parameter Reverse stand-off voltage Reverse breakdown voltage Reverse leakage current Total series resistance Total capacitance Clamping voltage IR = 1 mA VR = 5 V VR = 3.3 V IM = 1 mA VR = 0 V, f = 1 MHz btw. I/O and GND IPP = 4 A, 8/20 s waveform Test condition Symbol VRWM VBR IR IR R Ctot VC 45 50 120 15 6 1 0.4 55 Min Typ. Max 5 Unit V V A A pF V
Typical Characteristics (Tamb = 25 C unless otherwise specified)
14
VC - Typical Clamping Voltage ( V ) Transmission (S21) in dB
0 Z 0 = 50 -5 -10 -15 -20 -25 0 1 2 3 4 5 6
18899
12 10 8 6 4 2 0 I PP - Peak Pulse Current ( A )
1
10
100
1000
10000
18898
Frequency in MHz
Figure 1. Typical Clamping Voltage vs. Peak Pulse Current
Figure 2. Typical Insertion Loss Characteristic
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Document Number 85827 Rev. 1.3, 05-Jul-04
VISHAY
GTF701-HS3
Vishay Semiconductors
140 f = 1 MHz
CD - Diode Capacitance ( pF )
120 100 80 60 40 20 0 0 1 2 3 4 5 6
18900
VR - Reverse Voltage ( V)
Figure 3. Typical Capacitance vs. Reverse Voltage
10
I F - Forward Current ( mA )
1
0.1
0.01
0.001 0.4
18901
0.5
0.6
0.7
0.8
0.9
VF - Forward Voltage ( V )
Figure 4. Forward Current vs. Forward Voltage
8 7
V R - Reverse Voltage ( V )
6 5 4 3 2 1 0 0.01 0.1 1 10 100 1000
18902
IR - Reverse Current ( A )
Figure 5. Typical Reverse Voltage vs. Reverse Current
Document Number 85827 Rev. 1.3, 05-Jul-04
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GTF701-HS3
Vishay Semiconductors Package Dimensions in mm (Inches)
VISHAY
1 (0.039) 0.25 (0.010) (6x) 0.6 (0.023) 1 2 3
6 0.5 (0.020)
5
4
1 (0.039)
0.7 (0.027)
0.15 (0.006)
0.25 (0.010)
ISO Method E
1.6 (0.062)
1.6 (0.062)
Top View
18058
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Document Number 85827 Rev. 1.3, 05-Jul-04
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements.
GTF701-HS3
Vishay Semiconductors
2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 85827 Rev. 1.3, 05-Jul-04
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